Data underlying the publication: Forming-free HfOx-based memristors

DOI:10.4121/006465f2-1fed-4062-8bd7-28e290459b3b.v1
The DOI displayed above is for this specific version of this dataset, which is currently the latest. Newer versions may be published in the future. For a link that will always point to the latest version, please use
DOI: 10.4121/006465f2-1fed-4062-8bd7-28e290459b3b

Datacite citation style

Hua, Erbing (2025): Data underlying the publication: Forming-free HfOx-based memristors. Version 1. 4TU.ResearchData. dataset. https://doi.org/10.4121/006465f2-1fed-4062-8bd7-28e290459b3b.v1
Other citation styles (APA, Harvard, MLA, Vancouver, Chicago, IEEE) available at Datacite

Dataset

This research aims to develop the new type of memristors, named ReRAM devices, without electroforming steps, which will be more energy efficient and cost-effective. Using the simplified CMOS-compatible manufacturing techniques in the cleanroom, we fabricated the Pd-based memristor that can be free of electroforming. The dataset includes the raw CSV files collected from semiconductor analyzer B1500A that shows the performance of the devices, which is eliminated from the electroforming step.

History

  • 2025-04-24 first online, published, posted

Publisher

4TU.ResearchData

Organizations

TU Delft, Faculty of Electrical Engineering, Mathematics and Computer Science,
Department of Quantum and Computer Engineering

DATA

Files (4)