%0 Generic
%A Hua, Erbing
%D 2025
%T Data underlying the publication: Forming-free HfOx-based memristors
%U 
%R 10.4121/006465f2-1fed-4062-8bd7-28e290459b3b.v1
%K Memristors
%K Neuromorphic computing
%K Forming-free ReRAM
%K Energy efficient computing
%X <p>This research aims to develop the new type of memristors, named ReRAM devices, without electroforming steps, which will be more energy efficient and cost-effective. Using the simplified CMOS-compatible manufacturing techniques in the cleanroom, we fabricated the Pd-based memristor that can be free of electroforming. The dataset includes the raw CSV files collected from semiconductor analyzer B1500A that shows the performance of the devices, which is eliminated from the electroforming step.</p>
%I 4TU.ResearchData